研究领域
新型相变材料，相变存储器的设计、工艺与测试，相变存储器的物理模拟，化学机械抛光，集成电路用磨料。
近期论文
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1. Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application,Yan Liu, Zhitang Song, Bo Liu, Guanping Wu, Houpeng Chen, Chao Zhang, Lianhong Wang, and Songlin Feng, IEEE Electron Device Letters,Vol.33(8),p.1192-1194(2012).
2. Investigation of CuSb Te alloy for high-speed phase change random access memory applications,Yegang Lu, Sannian Song, Zhitang Song, Feng Rao, Liangcai Wu, Min Zhu, Bo Liu and Dongning Yao, Applied Physics Letters,Vol.100,p.193114(2012).
3. Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications Liangcai Wu, Xilin Zhou, Zhitang Song, Min Zhu, Yan Cheng, Feng Rao, Sannian Song, Bo Liu, and Songlin FengIEEE Transactions on Electron DevicesVol.58 (12),p.4423-4426(2011).
4. Sn Sb material for phase change memory,Feng Rao, Zhitang Song, Kun Ren,Xuelai Li,Liangcai Wu,Wei Xi,and Bo Liu, Applied Physics Letters,Vol.95, 032105(2009).
5. Phase change memory cell using tungsten trioxide bottom heating layer,Feng Rao, Zhitang Song, Yuefeng Gong,Liangcai Wu,Bo Liu,Songlin Feng, and Bomy Chen, Applied Physics Letters,Vol. 92, 223507(2008).
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