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Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2
Advanced Materials ( IF 26.8 ) Pub Date : 2025-04-21 , DOI: 10.1002/adma.202502336
Barnik Pal Rahul Paramanik Bipul Karmakar Tanima Kundu Mainak Palit Bikash Das Subhadeep Datta

The interaction of ultrasonic waves with piezoelectric materials provides a quantitative route to enhance electrical and mechanical coupling in van der Waals (vdW) heterostructures. Here, wire-bonding tip-assisted ultrasound (≈100 kHz) is presented as an effective approach to achieve piezoelectric transduction in monolayer MoS2 on Si/SiO2 substrates. Transient current measurements show reproducible sharp peaks with a peak-to-base ratio (Ipeak/Ibase ≈ 12) unique to monolayer MoS2, under an impact duration of 10–100 ms. Electrostatic gate voltage (Vg) and ultrasound power (WP) tunable piezocurrent exhibit 3–5 times higher sensitivity in the ON-state (Vg ⩾ 0) compared to the OFF-state. Multiple reflections of acoustic waves at source-drain electrodes, with an increment in reflection coefficients, enhance the linewidth of peak currents, validated by microacoustic simulations of surface acoustic wave (SAW) propagation in submicron geometries. The localized strain and Joule heating under ultrasonic excitation may generate a temperature rise of ≈20 K, which reduces activation energy barriers, potentially enhancing reaction rates in temperature-sensitive chemical processes, such as hydrogen peroxide decomposition. This thermal-damage-free method integrates with silicon-based fabrication, establishing a robust platform for on-chip catalysis and energy harvesting in FET-based piezotransducers.

中文翻译:

超声尖端辅助压电转导在单层 MoS2 中

超声波与压电材料的相互作用为增强范德华 (vdW) 异质结构中的电气和机械耦合提供了一种定量途径。在这里,引线键合尖端辅助超声 (≈100 kHz) 被提出作为在 Si/SiO2 衬底上的单层 MoS2 中实现压电转导的有效方法。瞬态电流测量显示,在 10-100 ms 的冲击持续时间下,单层 MoS2 特有的具有峰基比(I/I 碱基 ≈ 12)的可重现尖峰。静电栅极电压 (VG) 和超声功率 (WP) 可调压电流在导通状态 (VG ⩾ 0) 下的灵敏度是 OFF 状态下的 3-5 倍。声波在源极-漏极电极上的多次反射,以及反射系数的增加,增强了峰值电流的线宽,这通过对亚微米几何形状中表面声波 (SAW) 传播的微声学仿真进行了验证。超声激发下的局部应变和焦耳热可能会产生 ≈20 K 的温升,从而减少活化能屏障,从而可能提高温度敏感化学过程(如过氧化氢分解)中的反应速率。这种无热损伤方法与硅基制造相结合,为基于 FET 的压电换能器中的片上催化和能量收集建立了一个强大的平台。
更新日期:2025-04-21
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